By Jacopo Franco,Ben Kaczer,Guido Groeseneken
Due to the ever expanding electrical fields in scaled CMOS units, reliability is changing into a showstopper for additional scaled expertise nodes. even though a number of teams have already proven practical Si channel units with aggressively scaled similar Oxide Thickness (EOT) right down to 5Å, a ten yr trustworthy gadget operation can't be assured anymore as a result of critical unfavourable Bias Temperature Instability.
This e-book specializes in the reliability of the unconventional (Si)Ge channel quantum good pMOSFET know-how. This know-how is being thought of for attainable implementation in subsequent CMOS know-how nodes, due to its profit by way of provider mobility and equipment threshold voltage tuning. We notice that it additionally opens a level of freedom for gadget reliability optimization. by means of adequately tuning the gadget gate stack, sufficiently trustworthy ultra-thin EOT units with a ten years lifetime at working stipulations are demonstrated.
The huge experimental datasets accumulated on numerous processed 300mm wafers and offered right here express the reliability development to be procedure - and architecture-independent and, as such, effortlessly transferable to complex machine architectures as Tri-Gate (finFET) units. we suggest a actual version to appreciate the intrinsically greater reliability of the MOS process which include a Ge-based channel and a SiO2/HfO2 dielectric stack.
The more advantageous reliability houses right here mentioned strongly aid (Si)Ge expertise as a transparent frontrunner for destiny CMOS expertise nodes.
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