Reliability of High Mobility SiGe Channel MOSFETs for Future by Jacopo Franco,Ben Kaczer,Guido Groeseneken

By Jacopo Franco,Ben Kaczer,Guido Groeseneken

Due to the ever expanding electrical fields in scaled CMOS units, reliability is changing into a showstopper for additional scaled expertise nodes. even though a number of teams have already proven practical Si channel units with aggressively scaled similar Oxide Thickness (EOT) right down to 5Å, a ten yr trustworthy gadget operation can't be assured anymore as a result of critical unfavourable Bias Temperature Instability.

This e-book specializes in the reliability of the unconventional (Si)Ge channel quantum good pMOSFET know-how. This know-how is being thought of for attainable implementation in subsequent CMOS know-how nodes, due to its profit by way of provider mobility and equipment threshold voltage tuning. We notice that it additionally opens a level of freedom for gadget reliability optimization. by means of adequately tuning the gadget gate stack, sufficiently trustworthy ultra-thin EOT units with a ten years lifetime at working stipulations are demonstrated.

The huge experimental datasets accumulated on numerous processed 300mm wafers and offered right here express the reliability development to be procedure - and architecture-independent and, as such, effortlessly transferable to complex machine architectures as Tri-Gate (finFET) units. we suggest a actual version to appreciate the intrinsically greater reliability of the MOS process which include a Ge-based channel and a SiO2/HfO2 dielectric stack.

The more advantageous reliability houses right here mentioned strongly aid (Si)Ge expertise as a transparent frontrunner for destiny CMOS expertise nodes.

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